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2N4403BU Технические параметры

ON Semiconductor  2N4403BU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 179mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 750mV
hFEMin 100
Number of Elements 1 Element
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -40V
Max Power Dissipation 625mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Current Rating -600mA
Frequency 200MHz
Base Part Number 2N4403
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
Turn Off Time-Max (toff) 255ns
Width 4.19mm
Length 5.2mm
Height 5.33mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

2N4403BU Документы

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