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2N4919G Технические параметры

ON Semiconductor  2N4919G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Collector-Emitter Saturation Voltage 600mV
Number of Elements 1 Element
hFEMin 40
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Max Power Dissipation 30W
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 1A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N4919
Pin Count 3
Element Configuration Single
Power Dissipation 30W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA 1V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Transition Frequency 3MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Length 31.75mm
Width 6.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N4919G Документы

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