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2N5460G Технические параметры

ON Semiconductor  2N5460G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 8 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature -65°C~135°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.95
Voltage - Rated DC -40V
Max Power Dissipation 350mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5460
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 200mW
Power - Max 350mW
FET Type P-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Gate to Source Voltage (Vgs) 40V
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2 pF
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id 750mV @ 1μA
RoHS Status RoHS Compliant
Lead Free Lead Free

2N5460G Документы

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