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2N5550BU Технические параметры

ON Semiconductor  2N5550BU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 178.2mg
Collector-Emitter Breakdown Voltage 140V
Collector-Emitter Saturation Voltage 250mV
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 140V
Свойство продукта Значение свойства
Max Power Dissipation 625mW
Current Rating 600mA
Frequency 300MHz
Base Part Number 2N5550
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
Lead Free Lead Free
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2N5550BU Документы

2N5550BU brand manufacturers: ON Semiconductor, Anli stock, 2N5550BU reference price.ON Semiconductor. 2N5550BU parameters, 2N5550BU Datasheet PDF and pin diagram description download.You can use the 2N5550BU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N5550BU pin diagram and circuit diagram and usage method of function,2N5550BU electronics tutorials.You can download from the Anli.