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- 2N5551RL1G (CUT T&a;R)
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2N5551RL1G (CUT T&a;R) Технические параметры
ON Semiconductor 2N5551RL1G (CUT T&a;R) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Material | Si | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Category | Bipolar Small Signal | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 180 | |
| Maximum Collector-Emitter Voltage (V) | 160 | |
| Maximum Emitter Base Voltage (V) | 6 | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA | |
| Maximum DC Collector Current (A) | 0.6 | |
| Maximum Collector Cut-Off Current (nA) | 50 | |
| Minimum DC Current Gain | 80@1mA@5V|80@10mA@5V|30@50mA@5V | |
| Maximum Power Dissipation (mW) | 625 | |
| Maximum Transition Frequency (MHz) | 300 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Type | NPN | |
| Configuration | Single |
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