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2N5639 Технические параметры

ON Semiconductor  2N5639 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 201mg
Transistor Element Material SILICON
Breakdown Voltage / V -30V
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Voltage - Rated DC 30V
Max Power Dissipation 310mW
Terminal Position BOTTOM
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2N5639
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 625mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V VGS
Continuous Drain Current (ID) 25mA
Gate to Source Voltage (Vgs) -30V
Drain to Source Breakdown Voltage 30V
FET Technology JUNCTION
Drain to Source Resistance 60Ohm
Feedback Cap-Max (Crss) 4 pF
Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V
Voltage - Breakdown (V(BR)GSS) 35V
Resistance - RDS(On) 60Ohm
RoHS Status Non-RoHS Compliant
Lead Free Lead Free

2N5639 Документы

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