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2N5686G Технические параметры

ON Semiconductor  2N5686G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Number of Pins 2Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage 1V
Number of Elements 1 Element
hFEMin 15
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 80V
Max Power Dissipation 300W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 50A
Frequency 2MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5686
Pin Count 2
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A
Transition Frequency 2MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 8.51mm
Length 38.86mm
Width 26.67mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N5686G Документы

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