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2SA1768T-AN Технические параметры
ON Semiconductor 2SA1768T-AN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | SC-71 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 160V | |
| hFEMin | 140 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni) | |
| Max Power Dissipation | 1W | |
| Pin Count | 3 | |
| Power - Max | 1W | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 700mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 25mA, 250mA | |
| Frequency - Transition | 120MHz | |
| Collector Base Voltage (VCBO) | 180V | |
| Emitter Base Voltage (VEBO) | -6V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
2SA1768T-AN Документы
- PCN Obsolescence/ EOLEOL 18/Oct/2016
- Datasheets2SA1768
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