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2SA2039-H Технические параметры
ON Semiconductor 2SA2039-H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 week ago) | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Lead, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Collector-Emitter Breakdown Voltage | 50V | |
| hFEMin | 200 | |
| Packaging | Bulk | |
| Published | 2012 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 800mW | |
| Base Part Number | 2SA2039 | |
| Power - Max | 800mW | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 430mV | |
| Max Collector Current | 5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 430mV @ 100mA, 2A | |
| Frequency - Transition | 360MHz | |
| Emitter Base Voltage (VEBO) | 6V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
2SA2039-H Документы
- ReachStatementON-Semiconductor-company-79.pdf
- Environmental InformationMaterial Declaration 2SA2039-H
- Datasheets2SA2039/2SC5706
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