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2SA2125-S-TD-E Технические параметры

ON Semiconductor  2SA2125-S-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Collector-Emitter Breakdown Voltage 50V
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 3.5W
Power - Max 3.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Frequency - Transition 390MHz
RoHS Status RoHS Compliant
Просмотр сходства

2SA2125-S-TD-E Документы

2SA2125-S-TD-E brand manufacturers: ON Semiconductor, Anli stock, 2SA2125-S-TD-E reference price.ON Semiconductor. 2SA2125-S-TD-E parameters, 2SA2125-S-TD-E Datasheet PDF and pin diagram description download.You can use the 2SA2125-S-TD-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SA2125-S-TD-E pin diagram and circuit diagram and usage method of function,2SA2125-S-TD-E electronics tutorials.You can download from the Anli.