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2SA2125-TD-E Технические параметры

ON Semiconductor  2SA2125-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage -250mV
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 3.5W
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 390MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Max Frequency 390MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SA2125-TD-E Документы

2SA2125-TD-E brand manufacturers: ON Semiconductor, Anli stock, 2SA2125-TD-E reference price.ON Semiconductor. 2SA2125-TD-E parameters, 2SA2125-TD-E Datasheet PDF and pin diagram description download.You can use the 2SA2125-TD-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SA2125-TD-E pin diagram and circuit diagram and usage method of function,2SA2125-TD-E electronics tutorials.You can download from the Anli.