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2SA2126-S-TL-E Технические параметры

ON Semiconductor  2SA2126-S-TL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 800mW
Power Dissipation 800mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 520mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 520mV @ 100mA, 2A
Frequency - Transition 390MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SA2126-S-TL-E Документы

2SA2126-S-TL-E brand manufacturers: ON Semiconductor, Anli stock, 2SA2126-S-TL-E reference price.ON Semiconductor. 2SA2126-S-TL-E parameters, 2SA2126-S-TL-E Datasheet PDF and pin diagram description download.You can use the 2SA2126-S-TL-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SA2126-S-TL-E pin diagram and circuit diagram and usage method of function,2SA2126-S-TL-E electronics tutorials.You can download from the Anli.