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2SA2126-TL-E Технические параметры

ON Semiconductor  2SA2126-TL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage -520mV
Current-Collector (Ic) (Max) 3A
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Свойство продукта Значение свойства
Max Power Dissipation 800mW
Base Part Number 2SA2126
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 390MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 520mV @ 100mA, 2A
Max Frequency 390MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -6V
Height 2.3mm
Length 6.5mm
Width 5.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SA2126-TL-E Документы

2SA2126-TL-E brand manufacturers: ON Semiconductor, Anli stock, 2SA2126-TL-E reference price.ON Semiconductor. 2SA2126-TL-E parameters, 2SA2126-TL-E Datasheet PDF and pin diagram description download.You can use the 2SA2126-TL-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SA2126-TL-E pin diagram and circuit diagram and usage method of function,2SA2126-TL-E electronics tutorials.You can download from the Anli.