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2SB1122T-TD-E Технические параметры

ON Semiconductor  2SB1122T-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Contact Plating Tin
Number of Pins 3Pins
Collector-Emitter Saturation Voltage -500mV
Collector-Emitter Breakdown Voltage 50V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Max Frequency 150MHz
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Width 2.5mm
Length 4.5mm
Height 1.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SB1122T-TD-E Документы

2SB1122T-TD-E brand manufacturers: ON Semiconductor, Anli stock, 2SB1122T-TD-E reference price.ON Semiconductor. 2SB1122T-TD-E parameters, 2SB1122T-TD-E Datasheet PDF and pin diagram description download.You can use the 2SB1122T-TD-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SB1122T-TD-E pin diagram and circuit diagram and usage method of function,2SB1122T-TD-E electronics tutorials.You can download from the Anli.