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2SB815-7-TB-E Технические параметры

ON Semiconductor  2SB815-7-TB-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Saturation Voltage -120mV
Current-Collector (Ic) (Max) 700mA
Number of Elements 1 Element
hFEMin 300
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Свойство продукта Значение свойства
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA
Max Frequency 250MHz
Transition Frequency 250MHz
Collector Base Voltage (VCBO) -20V
Emitter Base Voltage (VEBO) -5V
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SB815-7-TB-E Документы

2SB815-7-TB-E brand manufacturers: ON Semiconductor, Anli stock, 2SB815-7-TB-E reference price.ON Semiconductor. 2SB815-7-TB-E parameters, 2SB815-7-TB-E Datasheet PDF and pin diagram description download.You can use the 2SB815-7-TB-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SB815-7-TB-E pin diagram and circuit diagram and usage method of function,2SB815-7-TB-E electronics tutorials.You can download from the Anli.