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2SC5415AF-TD-E Технические параметры

ON Semiconductor  2SC5415AF-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 12V
hFEMin 70
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 800mW
Pin Count 3
Power - Max 800mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 30mA 5V
Gain 9dB
Frequency - Transition 6.7GHz
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SC5415AF-TD-E Документы

2SC5415AF-TD-E brand manufacturers: ON Semiconductor, Anli stock, 2SC5415AF-TD-E reference price.ON Semiconductor. 2SC5415AF-TD-E parameters, 2SC5415AF-TD-E Datasheet PDF and pin diagram description download.You can use the 2SC5415AF-TD-E Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC5415AF-TD-E pin diagram and circuit diagram and usage method of function,2SC5415AF-TD-E electronics tutorials.You can download from the Anli.