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2SC5551AF-TD-E Технические параметры
ON Semiconductor 2SC5551AF-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 1.3W | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 1.3W | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 300mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 50mA 5V | |
| Max Frequency | 3.5GHz | |
| Transition Frequency | 3500MHz | |
| Max Breakdown Voltage | 30V | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | 2V | |
| Continuous Collector Current | 300mA | |
| Highest Frequency Band | S B | |
| Collector-Base Capacitance-Max | 4pF | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Width | 2.5mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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