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2SC6017-TL-E Технические параметры
ON Semiconductor 2SC6017-TL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 11 hours ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 200 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 950mW | |
| Reach Compliance Code | not_compliant | |
| Frequency | 200MHz | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 950mW | |
| Gain Bandwidth Product | 200MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 360mV | |
| Max Collector Current | 10A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A 2V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 360mV @ 250mA, 5A | |
| Max Breakdown Voltage | 50V | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 6V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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