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ON Semiconductor 2SJ661-DL-1E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) | |
| Factory Lead Time | 2 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 38A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V 10V | |
| Power Dissipation (Max) | 1.65W Ta 65W Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Reach Compliance Code | not_compliant | |
| Number of Channels | 1Channel | |
| Power Dissipation | 1.65W | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 39m Ω @ 19A, 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 38A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -4V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |