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ON Semiconductor 2SK3666-2-TB-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Package / Case | TO-236-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 200mW | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 30V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 10mA | |
| Gate to Source Voltage (Vgs) | -30V | |
| Drain Current-Max (Abs) (ID) | 0.01A | |
| Drain to Source Breakdown Voltage | 30V | |
| Input Capacitance | 4pF | |
| FET Technology | JUNCTION | |
| Drain to Source Resistance | 200Ohm | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Width | 1.5mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |