Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor 2SK3666-4-TB-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e6 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 200mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | 2SK3666 | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V | |
| Continuous Drain Current (ID) | 10mA | |
| Gate to Source Voltage (Vgs) | -30V | |
| Drain to Source Breakdown Voltage | 30V | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.5mA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 180mV @ 1μA | |
| Voltage - Breakdown (V(BR)GSS) | 30V | |
| Resistance - RDS(On) | 200Ohm | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |