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ON Semiconductor 3N256 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Bridge Rectifiers | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 4-SIP, KBPM | |
| Number of Pins | 4Pins | |
| Weight | 1.518004g | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2010 | |
| JESD-609 Code | e0 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Termination | Wire | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Capacitance | 25pF | |
| Voltage - Rated DC | 400V | |
| Max Power Dissipation | 4.7W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Current Rating | 2A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | 3N256 | |
| Lead Pitch | 4.1mm | |
| Max Output Current | 2A | |
| Diode Type | Single Phase | |
| Current - Reverse Leakage @ Vr | 5μA @ 400V | |
| Power Dissipation | 4.7W | |
| Output Current | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 3.14A | |
| Forward Current | 2A | |
| Max Reverse Leakage Current | 5μA | |
| Max Surge Current | 60A | |
| Forward Voltage | 1.1V | |
| Number of Phases | 1Phase | |
| Max Repetitive Reverse Voltage (Vrrm) | 400V | |
| Peak Non-Repetitive Surge Current | 60A | |
| Max Forward Surge Current (Ifsm) | 60A | |
| Height | 12.7mm | |
| Length | 15.24mm | |
| Width | 5.08mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |