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4N25TVM Технические параметры

ON Semiconductor  4N25TVM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка ON Semiconductor
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case 6-DIP (0.400, 10.16mm)
Mounting Type Through Hole
Mount Through Hole
Number of Pins 6Pins
Weight 864mg
Number of Elements 1 Element
Current Transfer Ratio-Min 20% @ 10mA
Published 2008
Packaging Tube
Operating Temperature -40°C~100°C
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED, VDE APPROVED
Max Power Dissipation 150mW
Свойство продукта Значение свойства
Base Part Number 4N25
Voltage - Isolation 4170Vrms
Output Voltage 30V
Output Type Transistor with Base
Configuration SINGLE
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.18V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Forward Current 60mA
Max Output Voltage 30V
Rise Time 2μs
Collector Emitter Voltage (VCEO) 500mV
Reverse Breakdown Voltage 6V
Max Input Current 60mA
Turn On / Turn Off Time (Typ) 2μs, 2μs
Current Transfer Ratio 20%
Dark Current-Max 50nA
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free

4N25TVM Документы

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