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4N32M Технические параметры
ON Semiconductor 4N32M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 6-DIP (0.300, 7.62mm) | |
| Number of Pins | 6Pins | |
| Supplier Device Package | 6-DIP | |
| Weight | 855mg | |
| Current Transfer Ratio-Min | 500% @ 10mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~100°C | |
| Packaging | Tube | |
| Published | 2008 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 100°C | |
| Min Operating Temperature | -40°C | |
| Max Power Dissipation | 250mW | |
| Base Part Number | 4N32 | |
| Voltage - Isolation | 4170Vrms | |
| Output Voltage | 30V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Type | Darlington with Base | |
| Number of Channels | 1Channel | |
| Number of Circuits | 1Circuit | |
| Power Dissipation | 250mW | |
| Voltage - Forward (Vf) (Typ) | 1.2V | |
| Input Type | DC | |
| Forward Current | 80mA | |
| Max Output Voltage | 30V | |
| Output Current per Channel | 150mA | |
| Forward Voltage | 1.5V | |
| Collector Emitter Voltage (VCEO) | 1V | |
| Max Collector Current | 150mA | |
| Reverse Breakdown Voltage | 3V | |
| Max Input Current | 80mA | |
| Current - DC Forward (If) (Max) | 80mA | |
| Input Current | 80mA | |
| Turn On / Turn Off Time (Typ) | 5μs, 100μs (Max) | |
| Vce Saturation (Max) | 1V | |
| Reverse Voltage (DC) | 3V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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