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4N35M Технические параметры

ON Semiconductor  4N35M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6Pins
Supplier Device Package 6-DIP
Weight 855mg
Current Transfer Ratio-Min 100% @ 10mA
Number of Elements 1 Element
Operating Temperature -40°C~100°C
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Max Power Dissipation 250mW
Base Part Number 4N35
Voltage - Isolation 4170Vrms
Output Voltage 30V
Output Type Transistor with Base
Свойство продукта Значение свойства
Number of Channels 1Channel
Number of Circuits 1Circuit
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.18V
Input Type DC
Forward Current 60mA
Max Output Voltage 30V
Rise Time 2μs
Forward Voltage 1.5V
Collector Emitter Voltage (VCEO) 300mV
Reverse Breakdown Voltage 6V
Max Input Current 50mA
Current - DC Forward (If) (Max) 60mA
Input Current 10mA
Turn On / Turn Off Time (Typ) 2μs, 2μs
Vce Saturation (Max) 300mV
Reverse Voltage (DC) 6V
Height 6.35mm
Length 6.35mm
Width 6.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
4N35M brand manufacturers: ON Semiconductor, Anli stock, 4N35M reference price.ON Semiconductor. 4N35M parameters, 4N35M Datasheet PDF and pin diagram description download.You can use the 4N35M Optoisolators - Transistor, Photovoltaic Output, DSP Datesheet PDF, find 4N35M pin diagram and circuit diagram and usage method of function,4N35M electronics tutorials.You can download from the Anli.