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55GN01CA-TB-E Технические параметры

ON Semiconductor  55GN01CA-TB-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 10V
Number of Elements 1 Element
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 200mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Frequency 5.5GHz
Pin Count 3
Element Configuration Single
Power - Max 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 4.5 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 70mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Gain 9.5dB
Transition Frequency 5500MHz
Max Breakdown Voltage 10V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 5mA
Noise Figure (dB Typ @ f) 1.9dB @ 1GHz
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
55GN01CA-TB-E brand manufacturers: ON Semiconductor, Anli stock, 55GN01CA-TB-E reference price.ON Semiconductor. 55GN01CA-TB-E parameters, 55GN01CA-TB-E Datasheet PDF and pin diagram description download.You can use the 55GN01CA-TB-E Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 55GN01CA-TB-E pin diagram and circuit diagram and usage method of function,55GN01CA-TB-E electronics tutorials.You can download from the Anli.