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BAS16LT1 Технические параметры
ON Semiconductor BAS16LT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) | |
| Contact Plating | Lead, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Diode Element Material | SILICON | |
| Number of Terminals | 3Terminals | |
| Manufacturer Lifecycle Status | OBSOLETE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Package | Bulk | |
| Base Product Number | BAS16 | |
| Mfr | onsemi | |
| Product Status | Obsolete | |
| Package Description | R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | CASE 318-08 | |
| Reflow Temperature-Max (s) | 30 | |
| Rohs Code | No | |
| Manufacturer Part Number | BAS16LT1 | |
| Power Dissipation (Max) | 0.225 W | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS INC | |
| Risk Rank | 5.63 | |
| Part Package Code | SOT-23 | |
| Packaging | Cut Tape (CT) | |
| Series | - | |
| JESD-609 Code | e0 | |
| Pbfree Code | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 225 mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Reach Compliance Code | unknown | |
| Current Rating | 200 mA | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | COMMERCIAL | |
| Polarity | Standard | |
| Configuration | SINGLE | |
| Element Configuration | Single | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V | |
| Power Dissipation | 225 mW | |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA | |
| Forward Current | 200 mA | |
| Max Reverse Leakage Current | 1 µA | |
| Max Surge Current | 500 mA | |
| Output Current-Max | 0.2 A | |
| Voltage - DC Reverse (Vr) (Max) | 75 V | |
| Current - Average Rectified (Io) | 200mA | |
| Max Reverse Voltage (DC) | 75 V | |
| Average Rectified Current | 200 mA | |
| Reverse Recovery Time | 6 ns | |
| Peak Reverse Current | 1 µA | |
| Max Repetitive Reverse Voltage (Vrrm) | 75 V | |
| Rep Pk Reverse Voltage-Max | 75 V | |
| JEDEC-95 Code | TO-236AB | |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz | |
| Recovery Time | 6 ns | |
| Reverse Recovery Time-Max | 0.006 µs | |
| Reverse Recovery Time (trr) | 6 ns | |
| Lead Free | Contains Lead |
BAS16LT1 Документы
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