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BAS16WT1G Технические параметры

ON Semiconductor  BAS16WT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 75V
Number of Elements 1 Element
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Capacitance 2pF
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAS16W
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 75V
Power Dissipation 200mW
Output Current 200mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 150mA
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 500mA
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 100V
Average Rectified Current 200mA
Reverse Recovery Time 6 ns
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 75V
Capacitance @ Vr, F 2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 500mA
Max Breakdown Voltage 75V
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 6 ns
Height 889μm
Length 2.1844mm
Width 1.3462mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS16WT1G Документы

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