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BAS19LT1G Технические параметры

ON Semiconductor  BAS19LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 120V
Number of Elements 1 Element
Packaging Cut Tape (CT)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Capacitance 5pF
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAS19
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 100V
Power Dissipation 385mW
Output Current 200mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Forward Current 200mA
Max Reverse Leakage Current 100nA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 625mA
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 120V
Average Rectified Current 200mA
Reverse Recovery Time 50 ns
Peak Reverse Current 100nA
Max Repetitive Reverse Voltage (Vrrm) 120V
Capacitance @ Vr, F 5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 625mA
Max Forward Surge Current (Ifsm) 625mA
Recovery Time 50 ns
Height 940μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS19LT1G Документы

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