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BAS21AHT1G Технические параметры

ON Semiconductor  BAS21AHT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BAS21AH
Pin Count 2
Element Configuration Single
Свойство продукта Значение свойства
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 40nA @ 200V
Power Dissipation 200mW
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Forward Current 200mA
Max Reverse Leakage Current 40nA
Operating Temperature - Junction -55°C~150°C
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 250V
Average Rectified Current 200mA
Reverse Recovery Time 50 ns
Peak Reverse Current 40nA
Max Repetitive Reverse Voltage (Vrrm) 250V
Capacitance @ Vr, F 5pF @ 0V 1MHz
Max Forward Surge Current (Ifsm) 625mA
Recovery Time 50 ns
Height 990.6μm
Length 1.778mm
Width 1.3462mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS21AHT1G Документы

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