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BAS21HT1G Технические параметры

ON Semiconductor  BAS21HT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Number of Pins 2Pins
Diode Element Material SILICON
Breakdown Voltage / V 250V
Number of Elements 1 Element
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Capacitance 5pF
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAS21H
Свойство продукта Значение свойства
Pin Count 2
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 200V
Power Dissipation 200mW
Output Current 200mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Forward Current 200mA
Max Reverse Leakage Current 100nA
Operating Temperature - Junction -55°C~150°C
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1V
Max Reverse Voltage (DC) 250V
Average Rectified Current 200mA
Reverse Recovery Time 50 ns
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 250V
Capacitance @ Vr, F 5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 5A
Max Forward Surge Current (Ifsm) 625mA
Recovery Time 50 ns
Height 1mm
Length 1.8mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS21HT1G Документы

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