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BAS70LT1G Технические параметры

ON Semiconductor  BAS70LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 70V
Number of Elements 1 Element
Packaging Cut Tape (CT)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FAST SWITCHING
HTS Code 8541.10.00.70
Capacitance 2pF
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30mA
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number BAS70L
Pin Count 3
Polarity Standard
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 10μA @ 70V
Power Dissipation 225mW
Output Current 20mA
Voltage - Forward (Vf) (Max) @ If 1V @ 15mA
Forward Current 70mA
Max Reverse Leakage Current 10μA
Operating Temperature - Junction -55°C~150°C
Halogen Free Halogen Free
Current - Average Rectified (Io) 70mA DC
Forward Voltage 1V
Max Reverse Voltage (DC) 70V
Average Rectified Current 70mA
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 70V
Capacitance @ Vr, F 2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 100mA
Max Forward Surge Current (Ifsm) 100mA
Height 1.01mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS70LT1G Документы

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