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BAT54SWT1G Технические параметры

ON Semiconductor  BAT54SWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Weight 30mg
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Voltage - Rated DC 30V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAT54SW
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Dual
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 2μA @ 25V
Power Dissipation 200mW
Voltage - Forward (Vf) (Max) @ If 800mV @ 100mA
Forward Current 200mA
Max Reverse Leakage Current 2μA
Operating Temperature - Junction -55°C~125°C
Max Surge Current 600mA
Output Current-Max 0.2A
Current - Average Rectified (Io) 200mA DC
Forward Voltage 800mV
Max Reverse Voltage (DC) 30V
Average Rectified Current 200mA
Reverse Recovery Time 5 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Peak Non-Repetitive Surge Current 600mA
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 600mA
Recovery Time 5 ns
Height 900μm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAT54SWT1G Документы

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