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BAT54T1G Технические параметры

ON Semiconductor  BAT54T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2Pins
Supplier Device Package SOD-123
Packaging Cut Tape (CT)
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Capacitance 10pF
Voltage - Rated DC 30V
Current Rating 200mA
Base Part Number BAT54T
Polarity Standard
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 2μA @ 25V
Power Dissipation 400mW
Свойство продукта Значение свойства
Output Current 200mA
Voltage - Forward (Vf) (Max) @ If 800mV @ 100mA
Forward Current 200mA
Max Reverse Leakage Current 2μA
Operating Temperature - Junction -55°C~125°C
Max Surge Current 600mA
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 200mA DC
Forward Voltage 350mV
Max Reverse Voltage (DC) 30V
Average Rectified Current 200mA
Reverse Recovery Time 5 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Capacitance @ Vr, F 10pF @ 1V 1MHz
Peak Non-Repetitive Surge Current 600mA
Max Forward Surge Current (Ifsm) 600mA
Recovery Time 5 ns
Height 1.12mm
Length 2.69mm
Width 1.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAT54T1G Документы

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