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BAV199LT1G Технические параметры

ON Semiconductor  BAV199LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Capacitance 2pF
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 215mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAV199L
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Common Cathode
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5nA @ 70V
Power Dissipation 300mW
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 715mA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 2A
Output Current-Max 0.215A
Halogen Free Halogen Free
Current - Average Rectified (Io) 215mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 70V
Average Rectified Current 215mA
Reverse Recovery Time 3 μs
Peak Reverse Current 5nA
Max Repetitive Reverse Voltage (Vrrm) 70V
Peak Non-Repetitive Surge Current 2A
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 3 μs
Height 1.016mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAV199LT1G Документы

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