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BAV70TT1G Технические параметры

ON Semiconductor  BAV70TT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAV70T
Pin Count 3
Element Configuration Common Cathode
Свойство продукта Значение свойства
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 70V
Power Dissipation 225mW
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 200mA
Max Reverse Leakage Current 5μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 500mA
Output Current-Max 0.1A
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 70V
Average Rectified Current 200mA
Reverse Recovery Time 6 ns
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 70V
Peak Non-Repetitive Surge Current 500mA
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 6 ns
Height 900μm
Length 1.65mm
Width 900μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAV70TT1G Документы

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