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BAV99WT1G Технические параметры

ON Semiconductor  BAV99WT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Weight 30mg
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 215mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAV99W
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2.5μA @ 70V
Power Dissipation 300mW
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 200mA
Max Reverse Leakage Current 2.4μA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 2A
Output Current-Max 0.215A
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 215mA DC
Forward Voltage 1V
Max Reverse Voltage (DC) 70V
Average Rectified Current 200mA
Reverse Recovery Time 6 ns
Peak Reverse Current 2.5μA
Max Repetitive Reverse Voltage (Vrrm) 70V
Peak Non-Repetitive Surge Current 2A
Reverse Voltage 70V
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 2A
Recovery Time 6 ns
Height 900μm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAV99WT1G Документы

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