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BC237BRL1 Технические параметры

ON Semiconductor  BC237BRL1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
hFEMin 150
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature EUROPEAN PART NUMBER
HTS Code 8541.21.00.75
Voltage - Rated DC 45V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number BC237
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 100mA
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

BC237BRL1 Документы

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