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BC32825_J35Z Технические параметры
ON Semiconductor BC32825_J35Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Number of Elements | 1 Element | |
| hFEMin | 160 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 625mW | |
| Frequency | 100MHz | |
| Base Part Number | BC328 | |
| Element Configuration | Single | |
| Power Dissipation | 625mW | |
| Gain Bandwidth Product | 100MHz | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Max Collector Current | 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Emitter Base Voltage (VEBO) | 5V | |
| RoHS Status | RoHS Compliant |
BC32825_J35Z Документы
- ReachStatementON-Semiconductor-company-79.pdf
- Datasheets
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