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BC373ZL1G Технические параметры

ON Semiconductor  BC373ZL1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 8000
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC 80V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code unknown
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC373
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.1V @ 250μA, 250mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 1A
RoHS Status RoHS Compliant
Lead Free Lead Free

BC373ZL1G Документы

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