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BC549BBU Технические параметры

ON Semiconductor  BC549BBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 110
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 30V
Max Power Dissipation 500mW
Current Rating 100mA
Frequency 300MHz
Свойство продукта Значение свойства
Base Part Number BC549
Element Configuration Single
Power Dissipation 500mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

BC549BBU Документы

BC549BBU brand manufacturers: ON Semiconductor, Anli stock, BC549BBU reference price.ON Semiconductor. BC549BBU parameters, BC549BBU Datasheet PDF and pin diagram description download.You can use the BC549BBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC549BBU pin diagram and circuit diagram and usage method of function,BC549BBU electronics tutorials.You can download from the Anli.