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BC635_J35Z Технические параметры

ON Semiconductor  BC635_J35Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 1A
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC635
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Frequency - Transition 100MHz
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BC635_J35Z Документы

BC635_J35Z brand manufacturers: ON Semiconductor, Anli stock, BC635_J35Z reference price.ON Semiconductor. BC635_J35Z parameters, BC635_J35Z Datasheet PDF and pin diagram description download.You can use the BC635_J35Z Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC635_J35Z pin diagram and circuit diagram and usage method of function,BC635_J35Z electronics tutorials.You can download from the Anli.