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BC846BM3T5G Технические параметры

ON Semiconductor  BC846BM3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Number of Elements 1 Element
hFEMin 150
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 65V
Max Power Dissipation 265mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 100mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC846
Pin Count 3
Element Configuration Single
Power Dissipation 640mW
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Height 550μm
Length 1.25mm
Width 850μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC846BM3T5G Документы

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