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BC847BPDW1T3G Технические параметры

ON Semiconductor  BC847BPDW1T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
hFEMin 150
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Published 2002
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 380mW
Frequency 100MHz
Base Part Number BC847BPD
Pin Count 6
Свойство продукта Значение свойства
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 380mW
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Width 1.35mm
Height 1mm
Length 2.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
BC847BPDW1T3G brand manufacturers: ON Semiconductor, Anli stock, BC847BPDW1T3G reference price.ON Semiconductor. BC847BPDW1T3G parameters, BC847BPDW1T3G Datasheet PDF and pin diagram description download.You can use the BC847BPDW1T3G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find BC847BPDW1T3G pin diagram and circuit diagram and usage method of function,BC847BPDW1T3G electronics tutorials.You can download from the Anli.