Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BC857BTT1G Технические параметры
ON Semiconductor BC857BTT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 45V | |
| Number of Elements | 1 Element | |
| hFEMin | 150 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | -45V | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -100mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 100MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BC857*TT | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 300mW | |
| Power - Max | 200mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 45V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 15nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 45V | |
| Collector Base Voltage (VCBO) | 50V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 900μm | |
| Length | 1.65mm | |
| Width | 900μm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ