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BC858AWT1G Технические параметры

ON Semiconductor  BC858AWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 90
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 150mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC85**W
Pin Count 3
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC858AWT1G Документы

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