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BC858CDXV6T1G Технические параметры
ON Semiconductor BC858CDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 17 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 2 Elements | |
| hFEMin | 420 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 500mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | -100mA | |
| Frequency | 100MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BC858CDXV6 | |
| Pin Count | 6 | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power Dissipation | 500mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 100MHz | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 15nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 30V | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 600μm | |
| Length | 1.7mm | |
| Width | 1.3mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BC858CDXV6T1G Документы
- DatasheetsBC858CDXV6T(1, 5)
- Environmental InformationMaterial Declaration BC858CDXV6T1G
- PCN Design/SpecificationWire Bond 01/Dec/2010
- PCN Assembly/OriginQualification Assembly/Test Site 25/Sep/2014
- PCN PackagingCarrier Tape 15/Aug/2017 Mult Devices 27/Oct/2017
- ReachStatementON-Semiconductor-company-79.pdf
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