ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

BC859BLT3 Технические параметры

ON Semiconductor  BC859BLT3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Package / Case 0603 (1608 Metric)
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package 0603
Number of Terminals 3Terminals
Transistor Element Material SILICON
Package Tape & Reel (TR)
Mfr KOA Speer Electronics, Inc.
Product Status Active
hFEMin 150
RoHS Non-Compliant
Current-Collector (Ic) (Max) 100 mA
Package Description CASE 318-08, TO-236, 3 PIN
Package Style SMALL OUTLINE
Moisture Sensitivity Levels NOT SPECIFIED
Package Body Material PLASTIC/EPOXY
Manufacturer Package Code CASE 318-08
Reflow Temperature-Max (s) 30
Rohs Code No
Transition Frequency-Nom (fT) 100 MHz
Manufacturer Part Number BC859BLT3
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Risk Rank 5.1
Part Package Code SOT-23
Operating Temperature -55°C ~ 155°C
Series SG73G
Size / Dimension 0.063 L x 0.031 W (1.60mm x 0.80mm)
Tolerance ±0.5%
JESD-609 Code e0
Pbfree Code No
Number of Terminations 2Terminations
Temperature Coefficient ±50ppm/°C
Свойство продукта Значение свойства
Resistance 105 kOhms
Terminal Finish TIN LEAD
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Composition Thick Film
Power (Watts) 0.333W, 1/3W
Max Power Dissipation 225 mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Failure Rate -
Polarity PNP
Configuration SINGLE
Element Configuration Single
Power - Max 300 mW
Gain Bandwidth Product 100 MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -45 V
Max Collector Current 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) -50 V
Emitter Base Voltage (VEBO) 5 V
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 220
Collector-Emitter Voltage-Max 30 V
Features Automotive AEC-Q200, Moisture Resistant, Pulse Withstanding
Height Seated (Max) 0.022 (0.55mm)
Ratings -

BC859BLT3 Документы

  • Datasheets
BC859BLT3 brand manufacturers: ON Semiconductor, Anli stock, BC859BLT3 reference price.ON Semiconductor. BC859BLT3 parameters, BC859BLT3 Datasheet PDF and pin diagram description download.You can use the BC859BLT3 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC859BLT3 pin diagram and circuit diagram and usage method of function,BC859BLT3 electronics tutorials.You can download from the Anli.