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BD13516S Технические параметры

ON Semiconductor  BD13516S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
ECCN Code EAR99
Voltage - Rated DC 45V
Max Power Dissipation 1.25W
Current Rating 1.5A
Base Part Number BD135
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 250MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD13516S Документы

BD13516S brand manufacturers: ON Semiconductor, Anli stock, BD13516S reference price.ON Semiconductor. BD13516S parameters, BD13516S Datasheet PDF and pin diagram description download.You can use the BD13516S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD13516S pin diagram and circuit diagram and usage method of function,BD13516S electronics tutorials.You can download from the Anli.