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BD1356STU Технические параметры

ON Semiconductor  BD1356STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 45V
Свойство продукта Значение свойства
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD135
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Lead Free Lead Free

BD1356STU Документы

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